High-pressure studies of resonant tunnelling in a graded parameter superlattice and in double barrier structures of GaAs/AlAs

High-pressure studies of resonant tunnelling in a graded parameter superlattice and in double barrier structures of GaAs/AlAs

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Veröffentlicht in:Semiconductor science and technology 1989-09, Vol.4 (9), p.754-764
Hauptverfasser: Pritchard, R, Klipstein, P C, Couch, N R, Kerr, T M, Roberts, J S, Mistry, P, Soylu, B, Stobbs, W M
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Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 764
container_issue 9
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container_title Semiconductor science and technology
container_volume 4
creator Pritchard, R
Klipstein, P C
Couch, N R
Kerr, T M
Roberts, J S
Mistry, P
Soylu, B
Stobbs, W M
description
doi_str_mv 10.1088/0268-1242/4/9/009
format Article
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title High-pressure studies of resonant tunnelling in a graded parameter superlattice and in double barrier structures of GaAs/AlAs
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