Novel GaAs/AlGaAs multiquantum-well Schottky-junction device and its photovoltaic LWIR detection

The authors have demonstrated photovoltaic detection for a multiple-quantum-well (MQW) long-wavelength infrared (LWIR) detector. With a blocking layer, the MQW detector exhibits Schottky I-V characteristics with extremely low dark current and excellent ideality factor. The dark current is 5*10/sup -14/ A for a 100*100 mu m/sup 2/ detector (designed for 10- mu m response) at 40 K, nearly nine orders of magnitude lower than that of a similar MQW LWIR detector without the blocking layer. The ideality factor is approximately 1.01-1.05 at T=40-80 K. The measured Schottky-barrier height is consistent with the energy difference between first excited states and ground states, or the peak of spectral response. The authors also report a measured effective Richardson constant (A**) for a GaAs/AlGaAs heterojunction using this blocking layer structure. The A** is approximately 2.3 A/cm/sup 2//K/sup 2/.< >