Effective techniques for ultra-high purity liquid phase epitaxial growth of Ga0.47In0.53As
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| Veröffentlicht in: | Japanese journal of applied physics 1992-07, Vol.31 (7), p.2185-2194 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | 2194 |
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| container_issue | 7 |
| container_start_page | 2185 |
| container_title | Japanese journal of applied physics |
| container_volume | 31 |
| creator | AMANO, T KONDO, S NAGAI, H |
| description | |
| doi_str_mv | 10.1143/jjap.31.2185 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_5462972</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>5462972</sourcerecordid><originalsourceid>FETCH-LOGICAL-j277t-9e0ba15cf0720ffca5eea02ae662a272509b1518f10d2b947e22012eeb7ed1073</originalsourceid><addsrcrecordid>eNotjLFOwzAUAC0EEqWw8QEeWBOeX-y4GauqlEqVWGBhqV6S58ZRaIPtAv17KsF0Op10QtwryJXSxWPf05gXKkc1MxdiogptMw2luRQTAFSZrhCvxU2M_VlLo9VEvC-d4yb5L5aJm27vP48cpTsEeRxSoKzzu06Ox-DTSQ7n6Fs5dhRZ8ugT_Xga5C4cvlMnD06uCHJt13vITTGPt-LK0RD57p9T8fa0fF08Z5uX1Xox32Q9WpuyiqEmZRoHFsG5hgwzARKXJRJaNFDVyqiZU9BiXWnLiKCQubbcKrDFVDz8fUeKDQ0u0L7xcTsG_0HhtDW6xMpi8Qv5LlRG</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effective techniques for ultra-high purity liquid phase epitaxial growth of Ga0.47In0.53As</title><source>Institute of Physics Journals</source><creator>AMANO, T ; KONDO, S ; NAGAI, H</creator><creatorcontrib>AMANO, T ; KONDO, S ; NAGAI, H</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.31.2185</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids) ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics</subject><ispartof>Japanese journal of applied physics, 1992-07, Vol.31 (7), p.2185-2194</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5462972$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>AMANO, T</creatorcontrib><creatorcontrib>KONDO, S</creatorcontrib><creatorcontrib>NAGAI, H</creatorcontrib><title>Effective techniques for ultra-high purity liquid phase epitaxial growth of Ga0.47In0.53As</title><title>Japanese journal of applied physics</title><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNotjLFOwzAUAC0EEqWw8QEeWBOeX-y4GauqlEqVWGBhqV6S58ZRaIPtAv17KsF0Op10QtwryJXSxWPf05gXKkc1MxdiogptMw2luRQTAFSZrhCvxU2M_VlLo9VEvC-d4yb5L5aJm27vP48cpTsEeRxSoKzzu06Ox-DTSQ7n6Fs5dhRZ8ugT_Xga5C4cvlMnD06uCHJt13vITTGPt-LK0RD57p9T8fa0fF08Z5uX1Xox32Q9WpuyiqEmZRoHFsG5hgwzARKXJRJaNFDVyqiZU9BiXWnLiKCQubbcKrDFVDz8fUeKDQ0u0L7xcTsG_0HhtDW6xMpi8Qv5LlRG</recordid><startdate>19920701</startdate><enddate>19920701</enddate><creator>AMANO, T</creator><creator>KONDO, S</creator><creator>NAGAI, H</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope></search><sort><creationdate>19920701</creationdate><title>Effective techniques for ultra-high purity liquid phase epitaxial growth of Ga0.47In0.53As</title><author>AMANO, T ; KONDO, S ; NAGAI, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-j277t-9e0ba15cf0720ffca5eea02ae662a272509b1518f10d2b947e22012eeb7ed1073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>AMANO, T</creatorcontrib><creatorcontrib>KONDO, S</creatorcontrib><creatorcontrib>NAGAI, H</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Japanese journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>AMANO, T</au><au>KONDO, S</au><au>NAGAI, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effective techniques for ultra-high purity liquid phase epitaxial growth of Ga0.47In0.53As</atitle><jtitle>Japanese journal of applied physics</jtitle><date>1992-07-01</date><risdate>1992</risdate><volume>31</volume><issue>7</issue><spage>2185</spage><epage>2194</epage><pages>2185-2194</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.31.2185</doi><tpages>10</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese journal of applied physics, 1992-07, Vol.31 (7), p.2185-2194 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_5462972 |
| source | Institute of Physics Journals |
| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of deposition of films and coatings film growth and epitaxy Physics |
| title | Effective techniques for ultra-high purity liquid phase epitaxial growth of Ga0.47In0.53As |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T14%3A21%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effective%20techniques%20for%20ultra-high%20purity%20liquid%20phase%20epitaxial%20growth%20of%20Ga0.47In0.53As&rft.jtitle=Japanese%20journal%20of%20applied%20physics&rft.au=AMANO,%20T&rft.date=1992-07-01&rft.volume=31&rft.issue=7&rft.spage=2185&rft.epage=2194&rft.pages=2185-2194&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.31.2185&rft_dat=%3Cpascalfrancis%3E5462972%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |