X-ray and charged particle detection with CsI(Tl) layer coupled to a Si:H photodiode layers

A compact real-time X-ray and charged-particle imager with digitized position output can be built either by coupling a fast scintillator to a photodiode array or by forming one on a photodiode array directly. CsI(Tl) layers 100-1000- mu m thick were evaporated on glass substrates from a crystal CsI(...

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Veröffentlicht in:IEEE transactions on nuclear science 1991-04, Vol.38 (2), p.255-262
Hauptverfasser: Fujieda, I., Cho, G., Drewery, J., Gee, T., Jing, T., Kaplan, S.N., Perez-Mendez, V., Wildermuth, D., Street, R.A.
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Sprache:eng
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Zusammenfassung:A compact real-time X-ray and charged-particle imager with digitized position output can be built either by coupling a fast scintillator to a photodiode array or by forming one on a photodiode array directly. CsI(Tl) layers 100-1000- mu m thick were evaporated on glass substrates from a crystal CsI(Tl). When coupled to a crystalline Si or amorphous silicon (a-Si:H) photodiode and exposed to calibrated X-ray pulses, their light yields and speed were found to be comparable to those of a crystal CsI(Tl). Single beta particle detection was demonstrated with this combination. The light spread inside evaporated CsI(Tl) was suppressed by its columnar structure. Scintillation detection gives much larger signals than direct X-ray detection due to the increased energy deposition in the detector material. Fabrication of monolithic-type X-ray sensors consisting of CsI+a-Si:H photodiodes is discussed.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.289306