GaAs/AlGaAs superlattice miniband detector with 14.5 μm peak response

GaAs/AlGaAs superlattice miniband detector with 14.5 μm peak response

Extended long wavelength infrared detection with a miniband-type AlGaAs/GaAs superlattice structure is reported. The experimental response band of the detector is peaked near 14.5 μm in good agreement with the theoretical response, provided that electron-electron interactions are taken into account....

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Veröffentlicht in:Applied physics letters 1992-06, Vol.60 (24), p.3022-3024
Hauptverfasser: BANDARA, K. M. S. V, CHOE, J.-W, FRANCOMBE, M. H, PERERA, A. G. U, LIN, Y. F
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:Extended long wavelength infrared detection with a miniband-type AlGaAs/GaAs superlattice structure is reported. The experimental response band of the detector is peaked near 14.5 μm in good agreement with the theoretical response, provided that electron-electron interactions are taken into account. The detector operates at a low bias voltage, which could lead to important advantages in application to IR focal plane arrays.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106796