Formation and behavior of BGaVAs complex defects in gallium arsenide grown by liquid-encapsulated Czochralski method

Formation and behavior of BGaVAs complex defects in gallium arsenide grown by liquid-encapsulated Czochralski method

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Veröffentlicht in:Journal of applied physics 1990-12, Vol.68 (11), p.5696-5699
Hauptverfasser: ORITO, F, FUJII, K, OKADA, Y
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_title Journal of applied physics
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creator ORITO, F
FUJII, K
OKADA, Y
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doi_str_mv 10.1063/1.346986
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1089-7550
language eng
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source AIP Digital Archive
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Formation and behavior of BGaVAs complex defects in gallium arsenide grown by liquid-encapsulated Czochralski method
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