X-Ray Diffraction Investigations of Structural Distortions of Ion-Implanted Semiconductor Single Crystals
Structural distortions of the surface layer of Si single crystals implanted by monoenergetic Au ions (ion energy 120 keV and 180 keV, doses 1013 ions/cm2 and 2 × 1014 ions/cm2, respectively) are studied by X‐ray diffraction. Traverse‐type topographs are obtained by Lang's method. A method to de...
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Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1991-01, Vol.123 (1), p.83-99 |
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creator | Sedrakyan, A. G. Haroutyunyan, V. S. Bezirganyan, P. H. Subotowicz, M. Trouni, K. G. |
description | Structural distortions of the surface layer of Si single crystals implanted by monoenergetic Au ions (ion energy 120 keV and 180 keV, doses 1013 ions/cm2 and 2 × 1014 ions/cm2, respectively) are studied by X‐ray diffraction. Traverse‐type topographs are obtained by Lang's method. A method to determine the thickness of the distorted layer using interference pattern contrast measurements is suggested.
[Russian Text Ignored]. |
doi_str_mv | 10.1002/pssa.2211230107 |
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[Russian Text Ignored].</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Ion radiation effects</subject><subject>Physical radiation effects, radiation damage</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0031-8965</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNpFUEFLwzAYDaLgnJ699uC1-qVpkxZPo-pWHCp24vAS0jQd0a4tSaf235sx2Q4f73u89z74HkKXGK4xQHDTWSuugwDjgAAGdoRGOAqwTxK6PEYjAIL9OKHRKTqz9hMAQmAwQnrpv4rBu9NVZYTsddt4WfOtbK9XYsus11Ze3puN7DdG1M5o-9bslaxt_Gzd1aLpVenlaq1l25TO3Bov182qVl5qBtuL2p6jk8qBuvjHMXp7uF-kM3_-PM3SydyXBMfMjyMGIowhDGhEqFKCkooRSaVKCjdhSFmMo1iosCBuKxVmAFVcyLBUpKgKMkZXu7udsFLU7q1Gass7o9fCDDwiQUwT5my3O9uPrtWwlzHwbZt82yY_tMlf8nxyoC7t79KuDvW7TwvzxSkjLOLvT1M-hcVH-pgkfEb-AET9fME</recordid><startdate>19910116</startdate><enddate>19910116</enddate><creator>Sedrakyan, A. G.</creator><creator>Haroutyunyan, V. S.</creator><creator>Bezirganyan, P. H.</creator><creator>Subotowicz, M.</creator><creator>Trouni, K. G.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope></search><sort><creationdate>19910116</creationdate><title>X-Ray Diffraction Investigations of Structural Distortions of Ion-Implanted Semiconductor Single Crystals</title><author>Sedrakyan, A. G. ; Haroutyunyan, V. S. ; Bezirganyan, P. H. ; Subotowicz, M. ; Trouni, K. G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3187-8570a480426536eea63f73c6ce9bce944678158ae4b3781de1700f8bc4de3bfb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Ion radiation effects</topic><topic>Physical radiation effects, radiation damage</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>online_resources</toplevel><creatorcontrib>Sedrakyan, A. G.</creatorcontrib><creatorcontrib>Haroutyunyan, V. S.</creatorcontrib><creatorcontrib>Bezirganyan, P. H.</creatorcontrib><creatorcontrib>Subotowicz, M.</creatorcontrib><creatorcontrib>Trouni, K. G.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><jtitle>Physica status solidi. A, Applied research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sedrakyan, A. G.</au><au>Haroutyunyan, V. S.</au><au>Bezirganyan, P. H.</au><au>Subotowicz, M.</au><au>Trouni, K. G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>X-Ray Diffraction Investigations of Structural Distortions of Ion-Implanted Semiconductor Single Crystals</atitle><jtitle>Physica status solidi. A, Applied research</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>1991-01-16</date><risdate>1991</risdate><volume>123</volume><issue>1</issue><spage>83</spage><epage>99</epage><pages>83-99</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><coden>PSSABA</coden><abstract>Structural distortions of the surface layer of Si single crystals implanted by monoenergetic Au ions (ion energy 120 keV and 180 keV, doses 1013 ions/cm2 and 2 × 1014 ions/cm2, respectively) are studied by X‐ray diffraction. Traverse‐type topographs are obtained by Lang's method. A method to determine the thickness of the distorted layer using interference pattern contrast measurements is suggested.
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subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Ion radiation effects Physical radiation effects, radiation damage Physics Structure of solids and liquids crystallography |
title | X-Ray Diffraction Investigations of Structural Distortions of Ion-Implanted Semiconductor Single Crystals |
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