X-Ray Diffraction Investigations of Structural Distortions of Ion-Implanted Semiconductor Single Crystals

Structural distortions of the surface layer of Si single crystals implanted by monoenergetic Au ions (ion energy 120 keV and 180 keV, doses 1013 ions/cm2 and 2 × 1014 ions/cm2, respectively) are studied by X‐ray diffraction. Traverse‐type topographs are obtained by Lang's method. A method to de...

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1991-01, Vol.123 (1), p.83-99
Hauptverfasser: Sedrakyan, A. G., Haroutyunyan, V. S., Bezirganyan, P. H., Subotowicz, M., Trouni, K. G.
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container_issue 1
container_start_page 83
container_title Physica status solidi. A, Applied research
container_volume 123
creator Sedrakyan, A. G.
Haroutyunyan, V. S.
Bezirganyan, P. H.
Subotowicz, M.
Trouni, K. G.
description Structural distortions of the surface layer of Si single crystals implanted by monoenergetic Au ions (ion energy 120 keV and 180 keV, doses 1013 ions/cm2 and 2 × 1014 ions/cm2, respectively) are studied by X‐ray diffraction. Traverse‐type topographs are obtained by Lang's method. A method to determine the thickness of the distorted layer using interference pattern contrast measurements is suggested. [Russian Text Ignored].
doi_str_mv 10.1002/pssa.2211230107
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subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Ion radiation effects
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids
crystallography
title X-Ray Diffraction Investigations of Structural Distortions of Ion-Implanted Semiconductor Single Crystals
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