X-Ray Diffraction Investigations of Structural Distortions of Ion-Implanted Semiconductor Single Crystals

X-Ray Diffraction Investigations of Structural Distortions of Ion-Implanted Semiconductor Single Crystals

Structural distortions of the surface layer of Si single crystals implanted by monoenergetic Au ions (ion energy 120 keV and 180 keV, doses 1013 ions/cm2 and 2 × 1014 ions/cm2, respectively) are studied by X‐ray diffraction. Traverse‐type topographs are obtained by Lang's method. A method to de...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1991-01, Vol.123 (1), p.83-99
Hauptverfasser: Sedrakyan, A. G., Haroutyunyan, V. S., Bezirganyan, P. H., Subotowicz, M., Trouni, K. G.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Ion radiation effects
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids
crystallography
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Structural distortions of the surface layer of Si single crystals implanted by monoenergetic Au ions (ion energy 120 keV and 180 keV, doses 1013 ions/cm2 and 2 × 1014 ions/cm2, respectively) are studied by X‐ray diffraction. Traverse‐type topographs are obtained by Lang's method. A method to determine the thickness of the distorted layer using interference pattern contrast measurements is suggested. [Russian Text Ignored].
ISSN:0031-8965
1521-396X
DOI:10.1002/pssa.2211230107