The role of dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II: Experiment : the high-temperature relaxation of ultrahigh-vacuum chemical-vapor-deposited SiGe thin film

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 1992, Vol.71 (10), p.4820-4825
Hauptverfasser:	STIFFLER, S. R, STANIS, C. L, GOORSKY, M, CHAN, K. K, DE FRESART, E
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!