A new 'shift and ratio' method for MOSFET channel-length extraction

A shift-and-ratio method for extracting MOSFET channel length is presented. In this method, channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results. It is shown to yield more accurate and consistent channel lengths for deep-submicrome...

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Veröffentlicht in:	IEEE electron device letters 1992-05, Vol.13 (5), p.267-269
Hauptverfasser:	Taur, Y., Zicherman, D.S., Lombardi, D.R., Restle, P.J., Hsu, C.H., Nanafi, H.I., Wordeman, M.R., Davari, B., Shahidi, G.G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences CMOS technology Data mining Electrical resistance measurement Electronics Equations Exact sciences and technology Lithography MOSFET circuits Page description languages Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Threshold voltage Transistors
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