A new 'shift and ratio' method for MOSFET channel-length extraction

A new 'shift and ratio' method for MOSFET channel-length extraction

A shift-and-ratio method for extracting MOSFET channel length is presented. In this method, channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results. It is shown to yield more accurate and consistent channel lengths for deep-submicrome...

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Veröffentlicht in:IEEE electron device letters 1992-05, Vol.13 (5), p.267-269
Hauptverfasser: Taur, Y., Zicherman, D.S., Lombardi, D.R., Restle, P.J., Hsu, C.H., Nanafi, H.I., Wordeman, M.R., Davari, B., Shahidi, G.G.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
CMOS technology
Data mining
Electrical resistance measurement
Electronics
Equations
Exact sciences and technology
Lithography
MOSFET circuits
Page description languages
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Threshold voltage
Transistors
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Zusammenfassung:A shift-and-ratio method for extracting MOSFET channel length is presented. In this method, channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results. It is shown to yield more accurate and consistent channel lengths for deep-submicrometer CMOS devices at room and low temperatures. It is also found that, for both nFET and pFET, the source-drain resistance is essentially independent of temperature from 300 to 77 K.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.145049