Fast thermal kinetic growth of silicon dioxide films on InP by rapid thermal low-pressure chemical vapour deposition

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Veröffentlicht in:	Semiconductor science and technology 1992-04, Vol.7 (4), p.583-594
Hauptverfasser:	Katz, A, Feingold, A, Pearton, S J, Chakrabarti, U K, Lee, K M
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
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doi_str_mv	10.1088/0268-1242/7/4/025
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
title	Fast thermal kinetic growth of silicon dioxide films on InP by rapid thermal low-pressure chemical vapour deposition
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