Hot carrier lifetime and trap cross-section in MOSFET oxide

The gate current is increasing as the MOSFET-semiconductor-devices dimensions continue to become progressively smaller. Although this current is associated with some problems concerning the MOSFET VLSI circuit design, it can be used in many important applications. This current and its related parameters are measured over a wide range of MOSFET geometry and biasing conditions. A detailed analysis of possible condition mechanisms and their contribution to the MOSFET oxide current is presented. We also present a model which provides accurate prediction of oxide parameters.