Fluorine diffusion on a polysilicon grain boundary network in relation to boron penetration from P+ gates

Fluorine diffusion on a polysilicon grain boundary network in relation to boron penetration from P+ gates

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Veröffentlicht in:IEEE electron device letters 1992, Vol.13 (1), p.14-16
Hauptverfasser: HSING-HUANG TSENG, ORLOWSKI, M, TOBIN, P. J, HANCE, R. L
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_title IEEE electron device letters
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creator HSING-HUANG TSENG
ORLOWSKI, M
TOBIN, P. J
HANCE, R. L
description
doi_str_mv 10.1109/55.144936
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1558-0563
language eng
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source IEEE Electronic Library (IEL)
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Fluorine diffusion on a polysilicon grain boundary network in relation to boron penetration from P+ gates
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