Amorphous silicon-germanium thin-film photodetector array

The authors report a photodetector array based on an amorphous silicon-germanium alloy thin film. The detector array is designed for detecting light pulses from (Ga,Al)As laser diodes. An experimental 2*2 detector array, addressed by a silicon shift register, works to a clock frequency of 25 MHz and...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 1992-01, Vol.13 (1), p.5-7
Hauptverfasser:	Shen, D.S., Conde, J.P., Chu, V., Aljishi, S., Liu, J.Z., Wagner, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous materials Applied sciences Electronics Exact sciences and technology Germanium silicon alloys Optical arrays Optical design Optoelectronic devices Photodetectors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor laser arrays Semiconductor thin films Sensor arrays Silicon alloys Silicon germanium
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The authors report a photodetector array based on an amorphous silicon-germanium alloy thin film. The detector array is designed for detecting light pulses from (Ga,Al)As laser diodes. An experimental 2*2 detector array, addressed by a silicon shift register, works to a clock frequency of 25 MHz and shows good stability.< >
ISSN:	0741-3106 1558-0563
DOI:	10.1109/55.144933