Radiation-hardened phototransistor

Radiation-hardened phototransistor

A radiation-hardened, monolithic, silicon bipolar phototransistor has been developed and produced. Common emitter current gain at 2 mA collector current is 225 and remains above 140 after irradiation of 1 E13 n/sq cm or 1 Mrad(Si). Device photoresponse to 820 nm light decreases about 30% after 1 Mra...

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Veröffentlicht in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1991-12, Vol.38 (6), p.1323-1328
Hauptverfasser: Matzen, W.T., Hawthorne, R.A., Kilian, W.T.
Format: Artikel
Sprache:eng
Schlagworte:
426000 > Engineering-- Components, Electron Devices & Circuits-- (1990-)
Absorption
AMPLIFICATION
Applied sciences
CURRENTS
Detectors
ELECTRIC CURRENTS
Electronics
ELEMENTS
ENGINEERING
Exact sciences and technology
FABRICATION
GAIN
HARDENING
Impurities
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Neutrons
Optoelectronic devices
Photodiodes
PHOTOTRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SEMIMETALS
SILICON
Substrates
Switches
TRANSISTORS 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems
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Beschreibung
Zusammenfassung:A radiation-hardened, monolithic, silicon bipolar phototransistor has been developed and produced. Common emitter current gain at 2 mA collector current is 225 and remains above 140 after irradiation of 1 E13 n/sq cm or 1 Mrad(Si). Device photoresponse to 820 nm light decreases about 30% after 1 Mrad(Si) exposure and 55% after 1 E13 n/sq cm irradiation for typical input light levels. This phototransistor is ideal for applications requiring a radiation-hardened optocoupler.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.124112