Structure and properties of TiSi 2 films on Si, obtained by Ti and Si co-evaporation in high vacuum

In this paper is reported an investigation of the phase formation, influence of growth parameters on structure and electrophysical properties and interface structure of thin films of TiSi 2 grown by electron beam co-evaporation in high vacuum on (111)Si. The possibility of molecular beam epitaxy of...

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Veröffentlicht in:	Vacuum 1991, Vol.42 (18), p.1191-1201
Hauptverfasser:	Valiev, K.A., Vasiliev, A.G., Orlikovskij, A.A., Vasiliev, A.L., Golovin, A.L., Imamov, R.M., Kiselev, N.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	In this paper is reported an investigation of the phase formation, influence of growth parameters on structure and electrophysical properties and interface structure of thin films of TiSi 2 grown by electron beam co-evaporation in high vacuum on (111)Si. The possibility of molecular beam epitaxy of TiSi 2 on (111)Si is shown. A model of phase and interface formation is proposed.
ISSN:	0042-207X 1879-2715
DOI:	10.1016/0042-207X(91)90130-B