Carrier concentration determination by photoreflectance at E1 in thin film, highly doped GaAs
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| Veröffentlicht in: | Applied physics letters 1991-09, Vol.59 (10), p.1218-1220 |
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| container_end_page | 1220 |
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| container_issue | 10 |
| container_start_page | 1218 |
| container_title | Applied physics letters |
| container_volume | 59 |
| creator | ALI BADAKHASHAN GLOSSER, R LAMBERT, S ANTHONY, M SILLMON, R. S THOMPSON, P. E ALAVI, K |
| description | |
| doi_str_mv | 10.1063/1.105508 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_5028386</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>5028386</sourcerecordid><originalsourceid>FETCH-LOGICAL-p182t-3226f2f208e130b7ff403dc45382273d8493ad50d55deeb414079bef6d9ee7153</originalsourceid><addsrcrecordid>eNotjk1LxDAURYMoWEfBn5CFS6sveU2TLodhnBEG3OhShrR5sZF-kWbTf29h3NzDgcvlMvYo4EVAia9ihVJgrlgmQOschTDXLAMAzMtKiVt2N8-_qyqJmLHvnY0xUOTNODQ0pGhTGAfuKFHsw3CxeuFTO6Yxku-oSXZtcpv4XvAw8NSu4UPXP_M2_LTdwt04keMHu53v2Y233UwP_9ywr7f95-6Ynz4O77vtKZ-EkSlHKUsvvQRDAqHW3heArikUGik1OlNUaJ0Cp5QjqgtRgK5q8qWriLRQuGFPl93Jzo3tfFwvhvk8xdDbuJwVSIOmxD-IGlQi</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Carrier concentration determination by photoreflectance at E1 in thin film, highly doped GaAs</title><source>AIP Digital Archive</source><creator>ALI BADAKHASHAN ; GLOSSER, R ; LAMBERT, S ; ANTHONY, M ; SILLMON, R. S ; THOMPSON, P. E ; ALAVI, K</creator><creatorcontrib>ALI BADAKHASHAN ; GLOSSER, R ; LAMBERT, S ; ANTHONY, M ; SILLMON, R. S ; THOMPSON, P. E ; ALAVI, K</creatorcontrib><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.105508</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Physics ; Surface and interface electron states</subject><ispartof>Applied physics letters, 1991-09, Vol.59 (10), p.1218-1220</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5028386$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>ALI BADAKHASHAN</creatorcontrib><creatorcontrib>GLOSSER, R</creatorcontrib><creatorcontrib>LAMBERT, S</creatorcontrib><creatorcontrib>ANTHONY, M</creatorcontrib><creatorcontrib>SILLMON, R. S</creatorcontrib><creatorcontrib>THOMPSON, P. E</creatorcontrib><creatorcontrib>ALAVI, K</creatorcontrib><title>Carrier concentration determination by photoreflectance at E1 in thin film, highly doped GaAs</title><title>Applied physics letters</title><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surface and interface electron states</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNotjk1LxDAURYMoWEfBn5CFS6sveU2TLodhnBEG3OhShrR5sZF-kWbTf29h3NzDgcvlMvYo4EVAia9ihVJgrlgmQOschTDXLAMAzMtKiVt2N8-_qyqJmLHvnY0xUOTNODQ0pGhTGAfuKFHsw3CxeuFTO6Yxku-oSXZtcpv4XvAw8NSu4UPXP_M2_LTdwt04keMHu53v2Y233UwP_9ywr7f95-6Ynz4O77vtKZ-EkSlHKUsvvQRDAqHW3heArikUGik1OlNUaJ0Cp5QjqgtRgK5q8qWriLRQuGFPl93Jzo3tfFwvhvk8xdDbuJwVSIOmxD-IGlQi</recordid><startdate>19910902</startdate><enddate>19910902</enddate><creator>ALI BADAKHASHAN</creator><creator>GLOSSER, R</creator><creator>LAMBERT, S</creator><creator>ANTHONY, M</creator><creator>SILLMON, R. S</creator><creator>THOMPSON, P. E</creator><creator>ALAVI, K</creator><general>American Institute of Physics</general><scope>IQODW</scope></search><sort><creationdate>19910902</creationdate><title>Carrier concentration determination by photoreflectance at E1 in thin film, highly doped GaAs</title><author>ALI BADAKHASHAN ; GLOSSER, R ; LAMBERT, S ; ANTHONY, M ; SILLMON, R. S ; THOMPSON, P. E ; ALAVI, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p182t-3226f2f208e130b7ff403dc45382273d8493ad50d55deeb414079bef6d9ee7153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surface and interface electron states</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>ALI BADAKHASHAN</creatorcontrib><creatorcontrib>GLOSSER, R</creatorcontrib><creatorcontrib>LAMBERT, S</creatorcontrib><creatorcontrib>ANTHONY, M</creatorcontrib><creatorcontrib>SILLMON, R. S</creatorcontrib><creatorcontrib>THOMPSON, P. E</creatorcontrib><creatorcontrib>ALAVI, K</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ALI BADAKHASHAN</au><au>GLOSSER, R</au><au>LAMBERT, S</au><au>ANTHONY, M</au><au>SILLMON, R. S</au><au>THOMPSON, P. E</au><au>ALAVI, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carrier concentration determination by photoreflectance at E1 in thin film, highly doped GaAs</atitle><jtitle>Applied physics letters</jtitle><date>1991-09-02</date><risdate>1991</risdate><volume>59</volume><issue>10</issue><spage>1218</spage><epage>1220</epage><pages>1218-1220</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.105508</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1991-09, Vol.59 (10), p.1218-1220 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_5028386 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states |
| title | Carrier concentration determination by photoreflectance at E1 in thin film, highly doped GaAs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T16%3A38%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Carrier%20concentration%20determination%20by%20photoreflectance%20at%20E1%20in%20thin%20film,%20highly%20doped%20GaAs&rft.jtitle=Applied%20physics%20letters&rft.au=ALI%20BADAKHASHAN&rft.date=1991-09-02&rft.volume=59&rft.issue=10&rft.spage=1218&rft.epage=1220&rft.pages=1218-1220&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.105508&rft_dat=%3Cpascalfrancis%3E5028386%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |