Symmetric Si/Si1-xGex two-dimensional hole gases grown by rapid thermal chemical vapor deposition
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| Veröffentlicht in: | Applied physics letters 1991, Vol.59 (22), p.2871-2873 |
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| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | 2873 |
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| container_issue | 22 |
| container_start_page | 2871 |
| container_title | Applied physics letters |
| container_volume | 59 |
| creator | VENKATARAMAN, V SCHWARTZ, P. V STURM, J. C |
| description | |
| doi_str_mv | 10.1063/1.105837 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1991, Vol.59 (22), p.2871-2873 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_5014359 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics |
| title | Symmetric Si/Si1-xGex two-dimensional hole gases grown by rapid thermal chemical vapor deposition |
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