Characteristics of narrow-channel polysilicon thin-film transistors

The effect of channel width on the characteristics of polysilicon thin-film transistors (TFTs) was investigated. n-channel TFTs with a channel length L of 20 mu m and a channel width W ranging from 20 to 0.5 mu m were fabricated and characterized. The most prominent effect of reducing the TFT channe...

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Veröffentlicht in:	IEEE transactions on electron devices 1991-08, Vol.38 (8), p.1967-1968
Hauptverfasser:	Yamauchi, N., Hajjar, J.-J.J., Reif, R., Nakazawa, K., Tanaka, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Active matrix technology Annealing Applied sciences Electronics Exact sciences and technology Grain size Integrated circuit technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films Semiconductor thin films Silicon Strips Thin film transistors Threshold voltage Transistors
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