Characteristics of narrow-channel polysilicon thin-film transistors

The effect of channel width on the characteristics of polysilicon thin-film transistors (TFTs) was investigated. n-channel TFTs with a channel length L of 20 mu m and a channel width W ranging from 20 to 0.5 mu m were fabricated and characterized. The most prominent effect of reducing the TFT channe...

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Veröffentlicht in:	IEEE transactions on electron devices 1991-08, Vol.38 (8), p.1967-1968
Hauptverfasser:	Yamauchi, N., Hajjar, J.-J.J., Reif, R., Nakazawa, K., Tanaka, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Active matrix technology Annealing Applied sciences Electronics Exact sciences and technology Grain size Integrated circuit technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films Semiconductor thin films Silicon Strips Thin film transistors Threshold voltage Transistors
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Zusammenfassung:	The effect of channel width on the characteristics of polysilicon thin-film transistors (TFTs) was investigated. n-channel TFTs with a channel length L of 20 mu m and a channel width W ranging from 20 to 0.5 mu m were fabricated and characterized. The most prominent effect of reducing the TFT channel was found to be a drastic decrease in threshold voltage when W was reduced to less than 5 mu m. This decrease was found to be correlated with the decrease in grain-boundary trap density.< >
ISSN:	0018-9383 1557-9646
DOI:	10.1109/16.119042