An observation of proton-induced latchup (in CMOS microprocessor)

An observation of proton-induced latchup (in CMOS microprocessor)

Proton-induced latchup in a CMOS microprocessor known to have a very low heavy-ion-induced latchup threshold LET was observed. The latchup cross section vs. proton energy for three different bias conditions is displayed. Average measured of latchup current within an 11-ms window following the onset...

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Veröffentlicht in:IEEE transactions on nuclear science 1992-12, Vol.39 (6), p.1654-1656
Hauptverfasser: Nichols, D.K., Coss, J.R., Watson, R.K., Schwartz, H.R., Pease, R.L.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit testing
CMOS logic circuits
CMOS technology
Electronics
Electronics And Electrical Engineering
Exact sciences and technology
General (including economical and industrial fields)
Instruments
Laboratories
Logic devices
Microprocessors
Power system protection
Protons
System testing
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Beschreibung
Zusammenfassung:Proton-induced latchup in a CMOS microprocessor known to have a very low heavy-ion-induced latchup threshold LET was observed. The latchup cross section vs. proton energy for three different bias conditions is displayed. Average measured of latchup current within an 11-ms window following the onset of latchup are provided, as a function of bias and incident proton energy. These data can be interpreted in terms of the present understanding of SEE phenomena.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.211349