20-GHz high-efficiency AlInAs-GaInAs on InP power HEMT

20-GHz high-efficiency AlInAs-GaInAs on InP power HEMT

A single-stage 20-GHz power amplifier was developed using a double-doped AlInAs-GaInAs-on-InP HEMT. Output power of 516 mW (0.645 W/mm) with power-added efficiency of 47.1% and 7.1-dB gain were obtained from an 800- mu m-wide device. The device had a saturated output power of more than 560 mW (0.7 W...

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Veröffentlicht in:IEEE microwave and guided wave letters 1993-05, Vol.3 (5), p.142-144
Hauptverfasser: Matloubian, M., Brown, A.S., Nguyen, L.D., Melendes, M.A., Larson, L., Delaney, M., Thompson, M., Rhodes, R., Pence, J.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Epitaxial layers
Exact sciences and technology
Frequency
HEMTs
High power amplifiers
Indium phosphide
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Power amplifiers
Power generation
Silicon
Temperature
Thermal conductivity
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Zusammenfassung:A single-stage 20-GHz power amplifier was developed using a double-doped AlInAs-GaInAs-on-InP HEMT. Output power of 516 mW (0.645 W/mm) with power-added efficiency of 47.1% and 7.1-dB gain were obtained from an 800- mu m-wide device. The device had a saturated output power of more than 560 mW (0.7 W/mm). This is believed to be the highest combination of output power, power density, gain, and power-added efficiency reported for an InP-based FET at this frequency.< >
ISSN:1051-8207
1558-2329
DOI:10.1109/75.217211