Self-aligned AlGaAs/GaAs HBT with selectively regrown OMVPE emitter

A self-aligned HBT mesa fabrication process utilizing selective organometallic vapor phase epitaxy (OMVPE) is reported whereby the extrinsic base has been made considerably thicker than the intrinsic base, thus avoiding the conventional tradeoff between base resistance and base transit time. This te...

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Veröffentlicht in:	IEEE electron device letters 1993-06, Vol.14 (6), p.295-297
Hauptverfasser:	Enquist, P.M., Slater, D.B., Hutchby, J.A., Morris, A.S., Trew, R.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Apertures Applied sciences Contact resistance Delay Electronics Etching Exact sciences and technology Fabrication Gallium arsenide Heterojunction bipolar transistors Ion implantation Metallization Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Transistors
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Zusammenfassung:	A self-aligned HBT mesa fabrication process utilizing selective organometallic vapor phase epitaxy (OMVPE) is reported whereby the extrinsic base has been made considerably thicker than the intrinsic base, thus avoiding the conventional tradeoff between base resistance and base transit time. This technique also simplifies processing by eliminating the need for emitter isolation by etching or ion implantation prior to base metallization. Application of this process to AlGaAs/GaAs N-p-n HBTs has yielded an intrinsic to extrinsic base sheet resistance ratio of 1.5, an f/sub T/ of 22 GHz, and an f/sub max/ of 55 GHz.< >
ISSN:	0741-3106 1558-0563
DOI:	10.1109/55.215203