Back-reflection topographic study of mixed cells in LEC-grown GaAs 0.2 at.% In

Cellular structure formation and organization have been studied in GaAs/In by taking advantage of the existence of striations which provide a view of the successive positions of the solid-liquid interface with a perfect periodicity. These striations are easily revealed by X-ray topography.

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 1993-04, Vol.26 (4A), p.A73-A75
Hauptverfasser:	Minari, F, Billia, B
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Cellular structure formation and organization have been studied in GaAs/In by taking advantage of the existence of striations which provide a view of the successive positions of the solid-liquid interface with a perfect periodicity. These striations are easily revealed by X-ray topography.
ISSN:	0022-3727 1361-6463
DOI:	10.1088/0022-3727/26/4A/017