Preparation of YBaCuO thin films on various substrates by laser ablation: Influence of the substrate temperature

High-quality YBa 2Cu 3O 7−δ films were prepared in situ by laser ablation on SrTiO 3 (100), on MgO (100) and on Si (111) + ZrO 2 buffer layer. We especially investigated the influence of the substrate temperature. In similar preparation circumstances zero resistivity has been achieved for films on SrTiO 3 up to 89.5 K, on MgO up to 84.6 K and on Si(+ZrO 2) up to 83.5 K. X-ray diffraction analysis was used to study the growth conditions of the films, and to determine the oxygen stoichiometry. The films deposited at substrate temperatures above 720°C show pure c-axis orientation with an oxygen deficiency δ