Observation of the track of a misfit dislocation in ordered Ga0.5In0.5P

We have found that a misfit dislocation which moves within a slightly strained layer of Ga 0·5 ln 0·5 P with atomic ordering on {1T1} planes leaves an observable track in the form of an antiphase domain boundary. Here we describe our observations and discuss the possibility of using this material as...

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Veröffentlicht in:	Philosophical magazine letters 1993-01, Vol.67 (1), p.59-65
Hauptverfasser:	Baxter, C. S., Stobbs, W. M., Gibbings, C. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) Exact sciences and technology Physics Structure of solids and liquids crystallography
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Zusammenfassung:	We have found that a misfit dislocation which moves within a slightly strained layer of Ga 0·5 ln 0·5 P with atomic ordering on {1T1} planes leaves an observable track in the form of an antiphase domain boundary. Here we describe our observations and discuss the possibility of using this material as a model system for the investigation of strain relaxation mechanisms.
ISSN:	0950-0839 1362-3036
DOI:	10.1080/09500839308240491