Field inversion generated in the CMOS double-metal process due to PETEOS and SOG interactions

Field inversion generated in the CMOS double-metal process due to PETEOS and SOG interactions

Severe field inversion was observed in circuits fabricated by the CMOS double metal process using PETEOS/inorganic SOG/PEOX as the intermetal dielectrics and PEOX/PECVD nitride as the passivation layer. The authors performed detailed studies and concluded that the field inversion is caused by the in...

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Veröffentlicht in:IEEE transactions on electron devices 1993-01, Vol.40 (1), p.49-53
Hauptverfasser: Hsu, Shun-Liang, Liu, Lu-Min, Fang, Chung-Hsin, Ying, Shu-Lan, Chen, Tien-Li, Lin, Mou-Shiung, Chang, Chun-Yen
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Boron
Circuits
CMOS process
Dielectrics
Electronics
Exact sciences and technology
Glass
Implants
Miscellaneous
Passivation
Planarization
Semiconductor device manufacture
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Testing
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Zusammenfassung:Severe field inversion was observed in circuits fabricated by the CMOS double metal process using PETEOS/inorganic SOG/PEOX as the intermetal dielectrics and PEOX/PECVD nitride as the passivation layer. The authors performed detailed studies and concluded that the field inversion is caused by the interaction between PETEOS and non-carbon-based SOG, triggered by the H/sup +/ released from PECVD nitride during the sintering. No field inversion was observed when PEOX/inorganic SOG/PEOX was used as the intermetal dielectrics. The effect of field inversion on the circuit yield is also discussed.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.249423