Characterization of tungsten deposited by GeH4 reduction of WF6, and its application as contact material to Si
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| Veröffentlicht in: | Journal of the Electrochemical Society 1992-12, Vol.139 (12), p.3615-3623 |
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| Sprache: | eng |
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| container_end_page | 3623 |
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| container_issue | 12 |
| container_start_page | 3615 |
| container_title | Journal of the Electrochemical Society |
| container_volume | 139 |
| creator | VAN DER JEUGD, C. A LEUSINK, G. J OOSTERLAKEN, T. G. M ALKEMADE, P. F. A NANVER, L. K GOUDENA, E. J. G JANSSEN, G. C. A. M RADELAAR, S |
| description | |
| doi_str_mv | 10.1149/1.2069131 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 1992-12, Vol.139 (12), p.3615-3623 |
| issn | 0013-4651 1945-7111 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_4500229 |
| source | Institute of Physics Journals |
| subjects | Applied sciences Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Metals. Metallurgy Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Characterization of tungsten deposited by GeH4 reduction of WF6, and its application as contact material to Si |
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