Electrical characteristics of TiB2 for ULSI applications
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Veröffentlicht in: | IEEE transactions on electron devices 1992-10, Vol.39 (10), p.2341-2345 |
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container_title | IEEE transactions on electron devices |
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creator | CHANG SIK CHOI QINGFENG WANG OSBURN, C. M RUGGLES, G. A SHAH, A. S |
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doi_str_mv | 10.1109/16.158806 |
format | Article |
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identifier | ISSN: 0018-9383 |
ispartof | IEEE transactions on electron devices, 1992-10, Vol.39 (10), p.2341-2345 |
issn | 0018-9383 1557-9646 |
language | eng |
recordid | cdi_pascalfrancis_primary_4494204 |
source | IEEE Electronic Library (IEL) |
subjects | Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | Electrical characteristics of TiB2 for ULSI applications |
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