A calibration of the localized vibrational mode absorption line due to isovalent boron impurities in gallium arsenide

GaAs samples doped with boron up to (B) = 3 x 10 super(18) cm super(-3) have been analysed by local vibrational mode infrared absorption spectroscopy and by SIMS. A calibration has been established indicating that an integrated absorption of 1 cm super(-2) in the LVM line at 517 cm super(-1) due to...

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Veröffentlicht in:	Semiconductor science and technology 1992-11, Vol.7 (11), p.1306-1309
Hauptverfasser:	Addinall, R, Newman, R C, Okada, Y, Orito, F
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Lattice dynamics Localized modes Phonons and vibrations in crystal lattices Physics
Online-Zugang:	Volltext
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Zusammenfassung:	GaAs samples doped with boron up to (B) = 3 x 10 super(18) cm super(-3) have been analysed by local vibrational mode infrared absorption spectroscopy and by SIMS. A calibration has been established indicating that an integrated absorption of 1 cm super(-2) in the LVM line at 517 cm super(-1) due to super(11)B sub(Ga) corresponds to 11.0 plus or minus 0.5 x 10 super(18) boron atoms per cm super(3). This calibration agrees with and extends a recent calibration proposed by Alt and Maier.
ISSN:	0268-1242 1361-6641
DOI:	10.1088/0268-1242/7/11/003