Low threshold current high-temperature operation of InGaAs/AlGaAs strained-quantum-well lasers
The authors report improved high-temperature characteristics for In/sub 0.2/Ga/sub 0.8/As strained-quantum-well ridge waveguide lasers with an optimized cavity design. They have fabricated In/sub 0.2/Ga/sub 0.8/As lasers that operate CW at up to 220 degrees C with over 9-mW output power. At 200 degr...
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| Veröffentlicht in: | IEEE photonics technology letters 1992-11, Vol.4 (11), p.1189-1191 |
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| container_end_page | 1191 |
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| container_issue | 11 |
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| container_title | IEEE photonics technology letters |
| container_volume | 4 |
| creator | Derry, P.L. Hager, H.E. Chiu, K.C. Booher, D.J. Miao, E.C. Hong, C.S. |
| description | The authors report improved high-temperature characteristics for In/sub 0.2/Ga/sub 0.8/As strained-quantum-well ridge waveguide lasers with an optimized cavity design. They have fabricated In/sub 0.2/Ga/sub 0.8/As lasers that operate CW at up to 220 degrees C with over 9-mW output power. At 200 degrees C the threshold current is as low as 15.9 mA for a 400- mu m-long laser with 35/98% reflectivity facets. Optimization of the laser cavity also improves the high-temperature operation of quantum-well lasers in other material systems; GaAs quantum well lasers that operate at up to 220 degrees C CW have been fabricated.< > |
| doi_str_mv | 10.1109/68.166937 |
| format | Article |
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They have fabricated In/sub 0.2/Ga/sub 0.8/As lasers that operate CW at up to 220 degrees C with over 9-mW output power. At 200 degrees C the threshold current is as low as 15.9 mA for a 400- mu m-long laser with 35/98% reflectivity facets. Optimization of the laser cavity also improves the high-temperature operation of quantum-well lasers in other material systems; GaAs quantum well lasers that operate at up to 220 degrees C CW have been fabricated.< ></description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.166937</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Design optimization ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Indium gallium arsenide ; Lasers ; Optical design ; Optical materials ; Optics ; Physics ; Power generation ; Power lasers ; Quantum well lasers ; Reflectivity ; Semiconductor lasers; laser diodes ; Threshold current ; Waveguide lasers</subject><ispartof>IEEE photonics technology letters, 1992-11, Vol.4 (11), p.1189-1191</ispartof><rights>1993 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-94640198611b01791e2ff9e371f7fb3126fa0b77140ead3407090d43024e8beb3</citedby><cites>FETCH-LOGICAL-c368t-94640198611b01791e2ff9e371f7fb3126fa0b77140ead3407090d43024e8beb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/166937$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/166937$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4396602$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Derry, P.L.</creatorcontrib><creatorcontrib>Hager, H.E.</creatorcontrib><creatorcontrib>Chiu, K.C.</creatorcontrib><creatorcontrib>Booher, D.J.</creatorcontrib><creatorcontrib>Miao, E.C.</creatorcontrib><creatorcontrib>Hong, C.S.</creatorcontrib><title>Low threshold current high-temperature operation of InGaAs/AlGaAs strained-quantum-well lasers</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>The authors report improved high-temperature characteristics for In/sub 0.2/Ga/sub 0.8/As strained-quantum-well ridge waveguide lasers with an optimized cavity design. They have fabricated In/sub 0.2/Ga/sub 0.8/As lasers that operate CW at up to 220 degrees C with over 9-mW output power. At 200 degrees C the threshold current is as low as 15.9 mA for a 400- mu m-long laser with 35/98% reflectivity facets. Optimization of the laser cavity also improves the high-temperature operation of quantum-well lasers in other material systems; GaAs quantum well lasers that operate at up to 220 degrees C CW have been fabricated.< ></description><subject>Design optimization</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Indium gallium arsenide</subject><subject>Lasers</subject><subject>Optical design</subject><subject>Optical materials</subject><subject>Optics</subject><subject>Physics</subject><subject>Power generation</subject><subject>Power lasers</subject><subject>Quantum well lasers</subject><subject>Reflectivity</subject><subject>Semiconductor lasers; laser diodes</subject><subject>Threshold current</subject><subject>Waveguide lasers</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNqNkb1PwzAUxCMEEqUwsDJ5QEgMaf1i1x9jVUGpVIkFViIneSZBadzaiSr-e1JSwQjT3fB7p3u6KLoGOgGgeirUBITQTJ5EI9AcYgqSn_ae9h6Azc6jixA-KAU-Y3wUva3dnrSlx1C6uiB55z02LSmr9zJucbNFb9rOI3HfrnINcZasmqWZh-m8PggJrTdVg0W860zTdpt4j3VNahPQh8vozJo64NVRx9Hr48PL4ilePy9Xi_k6zplQbay54BS0EgBZX1gDJtZqZBKstBmDRFhDMymBUzQF41RSTQvOaMJRZZixcXQ35G6923UY2nRThbzvYRp0XUgTpfqXpfwHyKSWTP8NzoRWHFQP3g9g7l0IHm269dXG-M8UaHrYJBUqHTbp2dtjqAm5qa03TV6FnwPOtBA06bGbAasQ8TduyPgCnCCSlQ</recordid><startdate>19921101</startdate><enddate>19921101</enddate><creator>Derry, P.L.</creator><creator>Hager, H.E.</creator><creator>Chiu, K.C.</creator><creator>Booher, D.J.</creator><creator>Miao, E.C.</creator><creator>Hong, C.S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7SP</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>19921101</creationdate><title>Low threshold current high-temperature operation of InGaAs/AlGaAs strained-quantum-well lasers</title><author>Derry, P.L. ; Hager, H.E. ; Chiu, K.C. ; Booher, D.J. ; Miao, E.C. ; Hong, C.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-94640198611b01791e2ff9e371f7fb3126fa0b77140ead3407090d43024e8beb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Design optimization</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Indium gallium arsenide</topic><topic>Lasers</topic><topic>Optical design</topic><topic>Optical materials</topic><topic>Optics</topic><topic>Physics</topic><topic>Power generation</topic><topic>Power lasers</topic><topic>Quantum well lasers</topic><topic>Reflectivity</topic><topic>Semiconductor lasers; laser diodes</topic><topic>Threshold current</topic><topic>Waveguide lasers</topic><toplevel>online_resources</toplevel><creatorcontrib>Derry, P.L.</creatorcontrib><creatorcontrib>Hager, H.E.</creatorcontrib><creatorcontrib>Chiu, K.C.</creatorcontrib><creatorcontrib>Booher, D.J.</creatorcontrib><creatorcontrib>Miao, E.C.</creatorcontrib><creatorcontrib>Hong, C.S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Derry, P.L.</au><au>Hager, H.E.</au><au>Chiu, K.C.</au><au>Booher, D.J.</au><au>Miao, E.C.</au><au>Hong, C.S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low threshold current high-temperature operation of InGaAs/AlGaAs strained-quantum-well lasers</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>1992-11-01</date><risdate>1992</risdate><volume>4</volume><issue>11</issue><spage>1189</spage><epage>1191</epage><pages>1189-1191</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>The authors report improved high-temperature characteristics for In/sub 0.2/Ga/sub 0.8/As strained-quantum-well ridge waveguide lasers with an optimized cavity design. They have fabricated In/sub 0.2/Ga/sub 0.8/As lasers that operate CW at up to 220 degrees C with over 9-mW output power. At 200 degrees C the threshold current is as low as 15.9 mA for a 400- mu m-long laser with 35/98% reflectivity facets. Optimization of the laser cavity also improves the high-temperature operation of quantum-well lasers in other material systems; GaAs quantum well lasers that operate at up to 220 degrees C CW have been fabricated.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/68.166937</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 1992-11, Vol.4 (11), p.1189-1191 |
| issn | 1041-1135 1941-0174 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_4396602 |
| source | IEEE Electronic Library (IEL) |
| subjects | Design optimization Exact sciences and technology Fundamental areas of phenomenology (including applications) Indium gallium arsenide Lasers Optical design Optical materials Optics Physics Power generation Power lasers Quantum well lasers Reflectivity Semiconductor lasers laser diodes Threshold current Waveguide lasers |
| title | Low threshold current high-temperature operation of InGaAs/AlGaAs strained-quantum-well lasers |
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