Low threshold current high-temperature operation of InGaAs/AlGaAs strained-quantum-well lasers

Low threshold current high-temperature operation of InGaAs/AlGaAs strained-quantum-well lasers

The authors report improved high-temperature characteristics for In/sub 0.2/Ga/sub 0.8/As strained-quantum-well ridge waveguide lasers with an optimized cavity design. They have fabricated In/sub 0.2/Ga/sub 0.8/As lasers that operate CW at up to 220 degrees C with over 9-mW output power. At 200 degr...

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Veröffentlicht in:IEEE photonics technology letters 1992-11, Vol.4 (11), p.1189-1191
Hauptverfasser: Derry, P.L., Hager, H.E., Chiu, K.C., Booher, D.J., Miao, E.C., Hong, C.S.
Format: Artikel
Sprache:eng
Schlagworte:
Design optimization
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Indium gallium arsenide
Lasers
Optical design
Optical materials
Optics
Physics
Power generation
Power lasers
Quantum well lasers
Reflectivity
Semiconductor lasers
laser diodes
Threshold current
Waveguide lasers
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Zusammenfassung:The authors report improved high-temperature characteristics for In/sub 0.2/Ga/sub 0.8/As strained-quantum-well ridge waveguide lasers with an optimized cavity design. They have fabricated In/sub 0.2/Ga/sub 0.8/As lasers that operate CW at up to 220 degrees C with over 9-mW output power. At 200 degrees C the threshold current is as low as 15.9 mA for a 400- mu m-long laser with 35/98% reflectivity facets. Optimization of the laser cavity also improves the high-temperature operation of quantum-well lasers in other material systems; GaAs quantum well lasers that operate at up to 220 degrees C CW have been fabricated.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.166937