A DLTS Study of InAs MIS Structures

Deep level transient spectroscopy (DLTS), capacitance–voltage (C–U) measurement, and thermally stimulated polarization current (TSPC) methods are used to study InAs MIS‐structures in the temperature region from 5 to 400K. It is found that above 200K the measured DLTS signal is caused by charge accumulation in the insulator layer. The parameters of two electrically active defect centers in the semiconductor space charge region (SCR) Ec – 0.06 eV and Ec – (0.15–0.20) eV are determined. These levelsapear in the energy spectrum of the interface states density as two separate peaks. The DLTS data are complemented by and compared with the C–U data. [Russian Text Ignored].