GALVANOMAGNETIC INFRARED-LUMINESCENCE OF VARYING-GAP CDXHG1-XTE/CDTE STRUCTURES

Luminescence of varying-gap epitaxial CdxHg1-xTe films at T = 295 K under conditions of magnetoconcentration effect were investigated theoretically and experimentally. Field and spectral characteristics of the positive and negative luminescence were studied. The use of varying-gap structures in comb...

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Veröffentlicht in:	Infrared physics 1992-09, Vol.33 (5), p.409-416
Hauptverfasser:	BOLGOV, SS, MALYUTENKO, VK, PIPA, SAVCHENKO, AP
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Optics Physical Sciences Physics Physics, Applied Science & Technology
Online-Zugang:	Volltext
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Zusammenfassung:	Luminescence of varying-gap epitaxial CdxHg1-xTe films at T = 295 K under conditions of magnetoconcentration effect were investigated theoretically and experimentally. Field and spectral characteristics of the positive and negative luminescence were studied. The use of varying-gap structures in combination with the magnetoconcentration effect for the excitation of luminescence in narrow-gap semiconductors at high temperatures is shown to be promising. In this case, high radiation power and the possibility of controlling the luminescence spectrum are demonstrated.
ISSN:	0020-0891
DOI:	10.1016/0020-0891(92)90040-Z