Commutating SOA capability of power DMOS FETs

Commutating SOA capability of power DMOS FETs

The commutating safe operating area (CSOA) of DMOS FETs is determined by the peak reverse-recovery current and the peak reapplied voltage. Both contribute to the triggering of localized turn-on of the built-in bipolar junction transistor (BJT). New DMOS FETs with lower bipolar gain and shorter minor...

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Veröffentlicht in:IEEE transactions on power electronics 1994-03, Vol.9 (2), p.141-145
Hauptverfasser: Tsui, A.C., Yilmaz, H., Hshieh, F.I., Chang, M., Fortier, T.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Area measurement
Circuit testing
Commutation
Diodes
Driver circuits
Electrical engineering
Electrical engineering. Electrical power engineering
Electronics
Exact sciences and technology
FETs
Motor drives
Power electronics, power supplies
Schottky diodes
Semiconductor optical amplifiers
Switching circuits
Transistors
Voltage
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Beschreibung
Zusammenfassung:The commutating safe operating area (CSOA) of DMOS FETs is determined by the peak reverse-recovery current and the peak reapplied voltage. Both contribute to the triggering of localized turn-on of the built-in bipolar junction transistor (BJT). New DMOS FETs with lower bipolar gain and shorter minority-carrier lifetime have doubled the CSOA capability.< >
ISSN:0885-8993
1941-0107
DOI:10.1109/63.286806