Visualization of electrical inhomogeneities in high-ohmic semiconductor plates by an ionization-type photographic system

A device for rapid visualization of electrical and spatial inhomogeneities of GaAs is described. This visualizer is a modification of the ionization type photographic system in which a semiconducting plate is placed between transparent plane parallel electrodes in a gas discharge cell. When a voltag...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 1994-06, Vol.27 (6), p.1229-1232
Hauptverfasser:	Lebedeva, N N, Salamov, B G, Akinoglu, B G, Allakhverdiev, K R
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A device for rapid visualization of electrical and spatial inhomogeneities of GaAs is described. This visualizer is a modification of the ionization type photographic system in which a semiconducting plate is placed between transparent plane parallel electrodes in a gas discharge cell. When a voltage is applied to the electrodes, a discharge luminescence glows in the gap under uniform infrared illumination of the semiconductor. The observed patterns give information about EL2 centres in the GaAs. (Original abstract-amended)
ISSN:	0022-3727 1361-6463
DOI:	10.1088/0022-3727/27/6/021