GaInAsP lateral current injection lasers on semi-insulating substrates

GaInAsP lateral current injection lasers on semi-insulating substrates

GaInAsP lateral current injection lasers have been fabricated on semi-insulating InP substrates. The lasers exhibit good lasing characteristics such as 10 mA threshold current, 10 mW maximum cw output power, and cw oscillation up to 70/spl deg/C. The laser has very low capacitance of 0.5 pF at zero...

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Veröffentlicht in:IEEE photonics technology letters 1994-04, Vol.6 (4), p.479-481
Hauptverfasser: Oe, K., Noguchi, Y., Caneau, C.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gas lasers
Indium phosphide
Lasers
Light sources
Optics
Optoelectronic devices
Physics
Power generation
Power lasers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
laser diodes
Substrates
Threshold current
Vertical cavity surface emitting lasers
Voltage
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Zusammenfassung:GaInAsP lateral current injection lasers have been fabricated on semi-insulating InP substrates. The lasers exhibit good lasing characteristics such as 10 mA threshold current, 10 mW maximum cw output power, and cw oscillation up to 70/spl deg/C. The laser has very low capacitance of 0.5 pF at zero bias voltage. This performance shows, for the first time, that the lateral current injection laser is a promising candidate for OEIC light sources.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.281801