Effect of surface passivation with SiN on the electrical properties on InP/InGaAs heterojunction bipolar transitors

Effect of surface passivation with SiN on the electrical properties on InP/InGaAs heterojunction bipolar transitors

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Veröffentlicht in:Journal of applied physics 1993, Vol.74 (9), p.5602-5605
Hauptverfasser: OUACHA, A, WILLANDER, M, HAMMARLUND, B, LOGAN, R. A
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_issue 9
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container_title Journal of applied physics
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creator OUACHA, A
WILLANDER, M
HAMMARLUND, B
LOGAN, R. A
description
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ispartof Journal of applied physics, 1993, Vol.74 (9), p.5602-5605
issn 0021-8979
1089-7550
language eng
recordid cdi_pascalfrancis_primary_4100465
source AIP Digital Archive
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Effect of surface passivation with SiN on the electrical properties on InP/InGaAs heterojunction bipolar transitors
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