CW operation of monolithic arrays of surface-emitting folded-cavity InGaAs/AlGaAs diode lasers

A monolithic 0.84-cm/sup 2/ two-dimensional array of surface-emitting folded-cavity InGaAs/AlGaAs diode lasers was mounted junction up on a W/Cu microchannel heatsink and evaluated under continuous-wave (CW) operating conditions. Each laser in the array contained two upward-deflecting internal-cavit...

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Veröffentlicht in:	IEEE photonics technology letters 1993-07, Vol.5 (7), p.747-750
Hauptverfasser:	Donnelly, J.P., Goodhue, W.D., Wang, C.A., Bailey, R.J., Lincoln, G.A., Johnson, G.D., Missaggia, L.J., Walpole, J.N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Design of specific laser systems Diode lasers Etching Exact sciences and technology Fundamental areas of phenomenology (including applications) Indium gallium arsenide Laser optical systems: design and operation Microchannel Mirrors Optical arrays Optics Physics Power generation Semiconductor laser arrays Surface emitting lasers Threshold current
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Beschreibung
Zusammenfassung:	A monolithic 0.84-cm/sup 2/ two-dimensional array of surface-emitting folded-cavity InGaAs/AlGaAs diode lasers was mounted junction up on a W/Cu microchannel heatsink and evaluated under continuous-wave (CW) operating conditions. Each laser in the array contained two upward-deflecting internal-cavity 45 degrees mirrors which were etched using chlorine ion-beam-assisted etching, and two top-surface facets. The CW threshold current densities of different sections of the array were or=30%. A CW output power of over 40 W was obtained from the entire array, while a current-limited output power density of 84 W/cm/sup 2/ with an average temperature rise of approximately 30 degrees C was obtained from a quarter of the array.< >
ISSN:	1041-1135 1941-0174
DOI:	10.1109/68.229793