Charge carrier recombination and diffusion in InGaAs(P) epitaxial layers

The method of picosecond light‐induced grating is used for the investigation of non‐equilibrium charge carrier dynamics in epitaxial layers of InGaAsP, InGaAs and InP. The carrier recombination time τR and the diffusion coefficient Da are determined. The influence of bleaching on the revealed values...

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1993-12, Vol.140 (2), p.439-443
Hauptverfasser:	Juodkazis, S., Petrauskas, M., Quacha, A., Willander, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carriers: generation, recombination, lifetime, trapping, mean free paths Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Iii-v semiconductors Physics
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Beschreibung
Zusammenfassung:	The method of picosecond light‐induced grating is used for the investigation of non‐equilibrium charge carrier dynamics in epitaxial layers of InGaAsP, InGaAs and InP. The carrier recombination time τR and the diffusion coefficient Da are determined. The influence of bleaching on the revealed values is discussed.
ISSN:	0031-8965 1521-396X
DOI:	10.1002/pssa.2211400214