Partial oxidation of porous silicon by thermal process : study of structure and electronic defects: Light emission from silicon

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Veröffentlicht in:	Journal of luminescence 1993, Vol.57 (1-6), p.45-49
Hauptverfasser:	MORAZZANI, V, CHAMARRO, M, GROSMAN, A, ORTEGA, C, RIGO, S, SIEJKA, J, VON BARDELEBEN, H. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Color centers and other defects Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electron paramagnetic resonance and relaxation Exact sciences and technology Magnetic resonances and relaxations in condensed matter, mössbauer effect Materials science Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other solid inorganic materials Photoluminescence Physics Surface treatments
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ISSN:	0022-2313 1872-7883