Dielectric Properties of Dysprosium Fluoride Thin Films

Amorphous Al—DyF3—Al thin films are prepared using vacuum evaporation at a pressure of 2.666 × 10−3 Pa. The film thickness is measured using Tolansky's multiple beam interferometry technique. The effect of temperature (300 to 408 K) and frequency (1 to 71 kHz) on capacitance and loss tangent of these films is studied and the results are discussed. Temperature coefficient of capacitance (TCC) and breakdown field strength for a particular film are estimated. The conduction mechanism in these films is explained basing on the value of activation energy.