Ion chemistry in tetraethylorthosilicate (C2H5O)4Si

The cross sections for simple and dissociative ionization of tetraethoxyorthosilicate ((C2H5O)4Si or TEOS) by electron impact have been measured using Fourier-transform mass spectrometry. The total ionization cross section is (2.5±0.5)×10−15 cm2 between 20 and 50 eV. Stoichiometries of the cations w...

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Veröffentlicht in:	Chemical physics letters 1993-12, Vol.215 (6), p.548-553
Hauptverfasser:	Holtgrave, J., Riehl, K., Abner, D., Haaland, P.D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic and molecular collision processes and interactions Atomic and molecular physics Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Electronic excitation and ionization of molecules intermediate molecular states (including lifetimes, state mixing, etc.) Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Scattering of atoms, molecules and ions
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Beschreibung
Zusammenfassung:	The cross sections for simple and dissociative ionization of tetraethoxyorthosilicate ((C2H5O)4Si or TEOS) by electron impact have been measured using Fourier-transform mass spectrometry. The total ionization cross section is (2.5±0.5)×10−15 cm2 between 20 and 50 eV. Stoichiometries of the cations were assigned by high-resolution mass spectra, and the reactions of TEOS fragment ions with neutral TEOS have been analyzed with double resonance methods. No anions were detected from 10 to 50 eV.
ISSN:	0009-2614 1873-4448
DOI:	10.1016/0009-2614(93)89353-J