New profiled silicon PIN photodiode for scintillation detector

Silicon photodiodes (planar PIN) are employed for the readout of scintillation shower counters. We have already reported on a new doping method called molecular layer doping (MLD) which has been developed for very large scale integrated (VLSI) technologies. In this study, several types of PIN photod...

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Veröffentlicht in:	IEEE Transactions on Nuclear Science 1995-08, Vol.42 (4), p.345-350
Hauptverfasser:	Saitoh, Y., Akamine, T., Satoh, K., Inoue, M., Yamanaka, J., Aoki, K., Miyahara, S., Kamiya, M., Ikeda, H., Avrillon, S., Okuno, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous materials Annealing BARIUM FLUORIDES Boron CRYSTAL DOPING Doping Exact sciences and technology Experimental methods and instrumentation for elementary-particle and nuclear physics INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Ion implantation Nuclear physics PHOTODIODES Physics PIN photodiodes Radiation detectors Radiation detectors, dosimeters READOUT SYSTEMS Scintillation counters Scintillation detectors SCINTILLATOR-PHOTODIODE DETECTORS SHOWER COUNTERS Silicon Surface resistance
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Zusammenfassung:	Silicon photodiodes (planar PIN) are employed for the readout of scintillation shower counters. We have already reported on a new doping method called molecular layer doping (MLD) which has been developed for very large scale integrated (VLSI) technologies. In this study, several types of PIN photodiodes, in which a p/sup +/ layer was formed by MLD (MLD-PIN) or BF/sub 2/ ion implantation (BF/sub 2/ I/I-PIN), have been examined. The MLD-PIN has a shallow p/sup +/ junction depth (x/sub j/) with sufficient high surface concentration, and simply and easily provides good performance for short-wavelength photosensitivity.< >
ISSN:	0018-9499 1558-1578
DOI:	10.1109/23.467823