Transient temperature response of vertical-cavity surface-emitting semiconductor lasers

Transient temperature response of vertical-cavity surface-emitting semiconductor lasers

Transient temperature rises in vertical-cavity surface-emitting semiconductor lasers (VCSEL's) have been calculated using Green's function methods. The influence of current spreading, material parameters, and operating conditions on the transient thermal response have been investigated. Th...

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Veröffentlicht in:IEEE journal of quantum electronics 1995-09, Vol.31 (9), p.1668-1673
Hauptverfasser: Zhao, Y.-G., McInerney, J.G.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Distributed Bragg reflectors
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Heating
Laser modes
Lasers
Optical surface waves
Optics
Optoelectronic devices
Physics
Power lasers
Response surface methodology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
Semiconductor lasers
laser diodes
Surface emitting lasers
Temperature
Vertical cavity surface emitting lasers
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Zusammenfassung:Transient temperature rises in vertical-cavity surface-emitting semiconductor lasers (VCSEL's) have been calculated using Green's function methods. The influence of current spreading, material parameters, and operating conditions on the transient thermal response have been investigated. The results show that current spreading plays an important role in the transient thermal properties of VCSEL's; under pulsed operation the temperature profile in the active layer changes with time up to a delay of several microseconds. The calculated results are in good agreement with the measured data.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.406381