Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface : III-IV nitrides and silicon carbide

Bibliographische Detailangaben

Veröffentlicht in:	Journal of electronic materials 1995, Vol.24 (4), p.303-309
Hauptverfasser:	SHENOY, J. N, CHINDALORE, G. L, MELLOCH, M. R, COOPER, J. A, PALMOUR, J. W, IRVINE, K. G
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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