Ka-band monolithic low-noise amplifier using direct ion-implanted GaAs MESFETs

Ka-band monolithic low-noise amplifiers using low cost direct ion-implanted GaAs MESFETs with 0.25 μm "T"-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% Idss self-biasing using a single power supply. These amplifiers achieved 2-3 d...

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Veröffentlicht in:	IEEE microwave and guided wave letters 1995-05, Vol.5 (5), p.156-158
Hauptverfasser:	Feng, M., Scherrer, D.R., Apostolakis, P.J., Middleton, J.R., McPartlin, M.J., Lautenvasser, B.D., Oliver, J.D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Costs Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Gain Gallium arsenide Ion implantation Low-noise amplifiers MESFETs Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits MMICs Noise figure Power amplifiers Power supplies
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