Ka-band monolithic low-noise amplifier using direct ion-implanted GaAs MESFETs

Ka-band monolithic low-noise amplifier using direct ion-implanted GaAs MESFETs

Ka-band monolithic low-noise amplifiers using low cost direct ion-implanted GaAs MESFETs with 0.25 μm "T"-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% Idss self-biasing using a single power supply. These amplifiers achieved 2-3 d...

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Veröffentlicht in:IEEE microwave and guided wave letters 1995-05, Vol.5 (5), p.156-158
Hauptverfasser: Feng, M., Scherrer, D.R., Apostolakis, P.J., Middleton, J.R., McPartlin, M.J., Lautenvasser, B.D., Oliver, J.D.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit properties
Costs
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Gain
Gallium arsenide
Ion implantation
Low-noise amplifiers
MESFETs
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
MMICs
Noise figure
Power amplifiers
Power supplies
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Zusammenfassung:Ka-band monolithic low-noise amplifiers using low cost direct ion-implanted GaAs MESFETs with 0.25 μm "T"-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% Idss self-biasing using a single power supply. These amplifiers achieved 2-3 dB noise figure with 30 dB associated gain at 33 GHz. These results, using low cost ion implantation techniques, rival the best GaAs p-HEMT MMIC results to date.
ISSN:1051-8207
1558-2329
DOI:10.1109/75.374083