Breakdown mechanisms in pseudomorphic InAlAs/InxGa1-xAs high electron mobility transistors on InP. II: On-state
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| Veröffentlicht in: | Japanese journal of applied physics 1995, Vol.34 (4A), p.1805-1808 |
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| Sprache: | eng |
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| container_end_page | 1808 |
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| container_issue | 4A |
| container_start_page | 1805 |
| container_title | Japanese journal of applied physics |
| container_volume | 34 |
| creator | DICKMANN, J SCHILDBERG, S RIEPE, K MAILE, B. E SCHURR, A GEYER, A NAROZNY, P |
| description | |
| doi_str_mv | 10.1143/jjap.34.1805 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese journal of applied physics, 1995, Vol.34 (4A), p.1805-1808 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_3496120 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Breakdown mechanisms in pseudomorphic InAlAs/InxGa1-xAs high electron mobility transistors on InP. II: On-state |
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